Arbeitsgebiete: Hans-Joachim Voigtländer
Introduction
Microchips and processors have to become smaller and faster with time. To realise that specifications the materials, which are used in production, have to be capable for that sizes.
During the last decades the used wavelength in photolithography processes decreased more and more to build the wished small structures.
The big problem is that a new photoresist technique is necessary for nearly every wavelength jump because the distances between the conducting paths decrease more and more. So the Line Edge Roughness (LER) is responsible, whether the size can be decreased further or not.
Finally the target in photoresist development is to obtain a photoresist material that brings the capability for short wavelength production and improved LER.