|Ringk, A.; Li, X.; Gholamrezaie, F.; Smits, E.C.P.; Neuhold, A.; Moser, A.; van der Marel, C.; Gelinck, G.H.; Resel, R.; de Leeuw, D.M.; Strohriegl, P.: N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters, Advanced Functional Materials, 23(16), 2016–2023 (2013) -- DOI: 10.1002/adfm.201202888|
This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.