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Macromolecular Chemistry I:

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Ringk, A.; Li, X.; Gholamrezaie, F.; Smits, E.C.P.; Neuhold, A.; Moser, A.; Gelinck, G.H.; Resel, R.; de Leeuw, D.M.; Strohriegl, P.: N-type self-assembled monolayer field-effect transistors, Proceedings of SPIE 8478(Organic Field-Effect Transistors XI) (2012) -- DOI: 10.1117/12.929535
Abstract:
Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a covalent fixation on aluminum oxide dielectrics. The organic field-effect transistors (OFETs) were fabricated by submerging predefined transistor substrates in a dilute solution of the molecule under ambient conditions. Investigations showed a thickness of about 3 nm for the organic layer which is coincides to the molecular length. The transistors showed bulk-like electron mobilities up to 10-3 cm2/Vs. Due to the absence of bulk current high on/off-ratios were achieved. An increase of the electron mobility with the channel length and XPS investigations point to a complete coverage of the dielectric with a dense monolayer. In addition, a p-type SAMFET based on a thiophene derivative and our new n-type SAMFET were combined to the first CMOS bias inverter based solely on SAMFETs.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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